RN2107f rn2109f 2001-02-08 1/5 type no. r1 (k ? ) r2 (k ? ) RN2107f 10 47 rn2108f 22 47 rn2109f 47 22 toshiba transistor silicon pnp epitaxial type (pct process) RN2107f,rn2108f,rn2109f switching, inverter circuit, interface circuit and driver circuit applications with built-in bias resistors simplify circuit design reduce a quantity of parts and manufacturing process complementary to rn1107f~rn1109f equivalent circuit and bias resister values maximum ratings (ta = 25c) characteristic symbol rating unit collector-base voltage v cbo ? 50 v collector-emitter voltage RN2107f ~rn2109f v ceo ? 50 v RN2107f ? 6 rn2108f ? 7 emitter-base voltage rn2109f v ebo ? 15 v collector current i c ? 100 ma collector power dissipation p c 100 mw junction temperature t j 150 c storage temperature range RN2107f ~rn2109f t stg ? 55~150 c jedec D eiaj D toshiba 2-2ha1a weight: 2.3 mg unit in mm toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707eaa1
RN2107f rn2109f 2001-02-08 2/5 electrical characteristics (ta = 25c) characteristic symbol test circuit test condition min typ. max unit i cbo v cb = ? 50v, i e = 0 D D ? 100 na collector cut-off current RN2107f ~rn2109f i ceo D v ce = ? 50v, i b = 0 D D ? 500 na RN2107f v eb = ? 6v, i c = 0 ? 0.081 D ? 0.15 rn2108f v eb = ? 7v, i c = 0 ? 0.078 D ? 0.145 emitter cut-off current rn2109f i ebo D v eb = ? 15v, i c = 0 ? 0.167 D ? 0.311 ma RN2107f 80 D D rn2108f 80 D D dc current gain rn2109f h fe D v ce = ? 5v, i c = ? 10ma 70 D D D collector-emitter saturation voltage RN2107f ~rn2109f v ce (sat) D i c = ? 5ma, i b = ? 0.25ma D ? 0.1 ? 0.3 v RN2107f ? 0.7 D ? 1.8 rn2108f ? 1.0 D ? 2.6 input voltage (on) rn2109f v i (on) D v ce = ? 0.2v, i c = ? 5ma ? 2.2 D ? 5.8 v RN2107f ? 0.5 D ? 1.0 rn2108f ? 0.6 D ? 1.16 input voltage (off) rn2109f v i (off) D v ce = ? 5v, i c = ? 0.1ma ? 1.5 D ? 2.6 v transition frequency RN2107f ~rn2109f f t D v ce = ? 10v, i c = ? 5ma D 200 D mhz collector output capacitance RN2107f ~rn2109f c ob D v cb = ? 10v, i e = 0, f = 1mh z D 3 6 pf RN2107f 7 10 13 rn2108f 15.4 22 28.6 input resistor rn2109f r1 D D 32.9 47 61.1 k ? RN2107f 0.191 0.213 0.232 rn2108f 0.421 0.468 0.515 resistor ratio rn2109f r1/r2 D D 1.92 2.14 2.35 D
RN2107f rn2109f 2001-02-08 3/5
RN2107f rn2109f 2001-02-08 4/5
RN2107f rn2109f 2001-02-08 5/5 type name marking RN2107f rn2108f rn2109f
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